Millimeter wave antenna and EMI shielding integrated with fan-out package

ABSTRACT

Systems and methods of manufacture are disclosed for a semiconductor device assembly having a semiconductor device having a first side and a second side opposite of the first side, a mold compound region adjacent to the semiconductor device, a redistribution layer adjacent to the first side of the semiconductor device, a dielectric layer adjacent to the second side of the semiconductor device, a first via extending through the mold compound region that connects to at least one trace in the dielectric layer, and an antenna structure formed on the dielectric layer and connected to the semiconductor device through the first via.

FIELD OF THE DISCLOSURE

The embodiments described herein relate to millimeter wave antennas,electromagnetic interference (EMI) shielding, and, in particularintegrating the same on a fan-out, or other, packaging.

BACKGROUND

As computing devices become more integrated into society, data accessand mobility are becoming more important to a typical consumer. Compactwireless computing devices, such as cell phones, tablets, laptops, etc.,are becoming faster, smaller, and more mobile. In order to meet thedemands of new generation products, processing and memory packageswithin mobile devices must become faster and more compact. 5thGeneration Wireless Systems (5G) provide high throughput, low latency,high mobility, and high connection density. Making use of millimeterwave bands (24-86 GHz) for mobile data communication is beneficial forproducing 5G systems.

Antennas used for millimeter wave communication typically include anantenna array deposited on a printed circuit board (PCB) within a mobiledevice. The area, or real estate, occupied by the antennas may decreasethe density of devices attached to the PCB and may result in larger,less mobile devices. Further, a horizontal millimeter wave antenna maycause interference to adjacent circuitry, over which the antenna may bedeposited. These factors can make it difficult to incorporate millimeterwave antennas into mobile devices. Other issues, disadvantages, anddrawbacks may exist.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional side view schematic of a semiconductordevice assembly incorporating integrated millimeter wave antennas inaccordance with disclosed embodiments.

FIG. 2 is a top view schematic of a semiconductor device assemblyincorporating integrated millimeter wave antennas in accordance withdisclosed embodiments.

FIG. 3 is a cross-sectional side view schematic of a semiconductordevice assembly incorporating integrated millimeter wave antennas inaccordance with disclosed embodiments.

FIG. 4 is a cross-sectional side view schematic of a semiconductordevice assembly incorporating integrated millimeter wave antennas on apackage-on-package (POP) assembly in accordance with disclosedembodiments.

FIG. 5 is a cross-sectional side view schematic of a semiconductordevice assembly incorporating integrated millimeter wave antennas on afan-out POP assembly in accordance with disclosed embodiments.

FIG. 6 is a cross-sectional side view schematic of a semiconductordevice assembly incorporating integrated millimeter wave antennas andEMI shielding in accordance with disclosed embodiments.

FIG. 7 is a flow chart showing a method of manufacturing a semiconductordevice assembly incorporating integrated millimeter wave antennas inaccordance with disclosed embodiments.

While the disclosure is susceptible to various modifications andalternative forms, specific embodiments have been shown by way ofexample in the drawings and will be described in detail herein. However,it should be understood that the disclosure is not intended to belimited to the particular forms disclosed. Rather, the intention is tocover all modifications, equivalents and alternatives falling within thespirit and scope of the invention as defined by the appended claims.

DETAILED DESCRIPTION

In this disclosure, numerous specific details are discussed to provide athorough and enabling description for embodiments of the presentdisclosure. One of ordinary skill in the art will recognize that thedisclosure can be practiced without one or more of the specific details.Well-known structures and/or operations often associated withsemiconductor devices may not be shown and/or may not be described indetail to avoid obscuring other aspects of the disclosure. In general,it should be understood that various other devices, systems, and/ormethods in addition to those specific embodiments disclosed herein maybe within the scope of the present disclosure.

The term “semiconductor device assembly” can refer to an assembly of oneor more semiconductor devices, semiconductor device packages, and/orsubstrates, which may include interposers, supports, and/or othersuitable substrates. The semiconductor device assembly may bemanufactured as, but not limited to, discrete package form, strip ormatrix form, and/or wafer panel form. The term “semiconductor device”generally refers to a solid-state device that includes semiconductormaterial. A semiconductor device can include, for example, asemiconductor substrate, wafer, panel, or a single die from a wafer orsubstrate. A semiconductor device may further include one or more devicelayers deposited on a substrate. A semiconductor device may refer hereinto a semiconductor die, but semiconductor devices are not limited tosemiconductor dies.

The term “semiconductor device package” can refer to an arrangement withone or more semiconductor devices incorporated into a common package. Asemiconductor package can include a housing or casing that partially orcompletely encapsulates at least one semiconductor device. Asemiconductor package can also include a substrate that carries one ormore semiconductor devices. The substrate may be attached to orotherwise incorporate within the housing or casing.

As used herein, the terms “vertical,” “lateral,” “upper,” and “lower”can refer to relative directions or positions of features in thesemiconductor devices and/or semiconductor device assemblies shown inthe Figures. For example, “upper” or “uppermost” can refer to a featurepositioned closer to the top of a page than another feature. Theseterms, however, should be construed broadly to include semiconductordevices and/or semiconductor device assemblies having otherorientations, such as inverted or inclined orientations wheretop/bottom, over/under, above/below, up/down, and left/right can beinterchanged depending on the orientation.

Various embodiments of this disclosure are directed to semiconductordevices, semiconductor device assemblies, semiconductor packages, andmethods of making and/or operating semiconductor devices. In oneembodiment a semiconductor device assembly includes a semiconductordevice having a first side and a second side opposite of the first side,a mold compound region adjacent to the semiconductor device, aredistribution layer adjacent to the first side of the semiconductordevice, a dielectric layer adjacent to the second side of thesemiconductor device, a first via extending through the mold compoundregion and connected to at least one trace in the dielectric layer, andan antenna structure formed on the dielectric layer and connected to thesemiconductor device through the first via. In further disclosedembodiments, the antenna structure is a 5 g millimeter wave antenna. Instill further disclosed embodiments, the antenna structure is a tunableantenna. In still further disclosed embodiments, the semiconductordevice assembly includes a second via extending through the moldcompound region and connected to at least on trace in the dielectriclayer, and a second antenna structure formed on the dielectric layer andconnected to the semiconductor device through the second via.

In another disclosed embodiment, a semiconductor device assemblyincludes a semiconductor device having a first side, a mold compoundregion, a first redistribution layer adjacent to the first side of thesemiconductor device, the first redistribution layer configured toconnect the semiconductor device to an external device, a secondredistribution layer adjacent to the first redistribution layer, and anantenna structure formed in the second redistribution layer, thesemiconductor device connected to the antenna structure through thefirst redistribution layer.

In another disclosed embodiment, a semiconductor device assemblyincludes a package-on-package assembly including a first semiconductordevice, at least one via, and a second semiconductor device connected tothe first semiconductor device through the at least one via, and anantenna structure connected to at least one of the first semiconductordevice or the second semiconductor device through the at least one via.In further disclosed embodiments, the antenna structure is locatedbetween the first semiconductor device and the second semiconductordevice. In still further disclosed embodiments, the semiconductor deviceassembly includes a second antenna structure located on a back side ofthe package-on-package assembly.

In another disclosed embodiment, a semiconductor device assemblyincludes a semiconductor device having an active side and a back side, amold compound region, a first redistribution layer adjacent to the backside of the semiconductor device, an electromagnetic interference (EMI)shield located in the first redistribution layer, a secondredistribution layer located above the first redistribution layer, andan antenna structure formed in the second redistribution layer andconnected to the semiconductor device through a via.

Also disclosed is a method for making a semiconductor device assembly,the method including molding a mold compound layer around asemiconductor device, forming a dielectric layer on top of the moldcompound layer, forming an antenna structure on top of the dielectriclayer, forming a via through the mold compound layer that connects to atleast one trace in the dielectric layer, and connecting the antennastructure to the semiconductor device through the via. In a furtherembodiment, the method includes forming a second antenna structure ontop of the dielectric layer, forming a second via through the moldcompound layer and the dielectric layer, and connecting the secondantenna structure to the semiconductor device through the second via.

FIG. 1 is a cross-sectional side view schematic of a semiconductordevice assembly 100 incorporating integrated millimeter wave antennas700, 702 in accordance with disclosed embodiments. As shown, asemiconductor device assembly 100 can have a semiconductor device 200 ina fan-out package with mold compound 300 (e.g., epoxy molding compound,or ECM) on the lateral sides 206, 208 of the semiconductor device 200.The semiconductor device 200 has an active side 202 and a back side 204.The active side 202 is connected through a first redistribution layer400 using one or more traces, vias, or the like 606 to an interconnectsuch as solder balls 608 for connection to other devices. As one ofordinary skill in the art having the benefit of this disclosure wouldunderstand, the traces, vias, or the like 606 and balls 608 are merelyexemplary and different amounts, locations, etc., may be used.

As also shown, embodiments may include a second dielectric, orredistribution layer 500, on the back side 204 of the semiconductordevice 200 and mold compound 300 layers to contain one or moremillimeter wave antenna structures 700, 702. As shown, antennastructures 700, 702 may be connected to active surface 202 through oneor more vias 602, 604 that pass through the mold compound 300. As one ofordinary skill in the art having the benefit of this disclosure wouldunderstand, the vias 602, 604 and antennae 700, 702 are merely exemplaryand different amounts, locations, etc., may be used.

FIG. 2 is a top view schematic of a semiconductor device assembly 100incorporating integrated millimeter wave antennas 700, 702, 704, 706 a,and 706 b formed in the top redistribution layer 500 in accordance withdisclosed embodiments. As shown, the millimeter wave antennas 700, 702,704, 706 a, 706 b may comprise any suitable shape, size, configuration,or the like in accordance with the design of the device.

As explained herein, an antenna structure 700, 702, 704, 706 a, and 706b may be tuned for a particular transmission/receiver device, or radiocircuitry, by any number of suitable methods. For example, differenttypes of radio circuitry may require antennas of different sizes orshapes. By including an antenna structure such as 706 a and 706 b, witha separate connection to each portion 706 a and 706 b from the activeside 202 of the semiconductor device 200, the size of the antenna may bechanged (e.g., lengthened by connecting both sections 706 a and 706 b tothe same circuitry, or shortened by connecting only one section) and theantenna may be tuned to the desired outcome. Likewise, by connectingmultiple antenna structures (e.g., 702 and 704) to the same circuitry adifferent shape of antenna may be implemented.

In some embodiments, the semiconductor device assembly 100 may beinitially manufactured with all the antenna structures (e.g., 700, 702,704, 706 a, 706 b) connected to the active side 202 and by severing aconnection (e.g., 602, 604) between the antenna structures, thesemiconductor device assembly 100 may be customized to a particularend-user. Severing of the connections (e.g., 602, 604) may beaccomplished after manufacturing by laser ablation, by including a fusein the connection, by including a switch in the connection, by alteringthe circuitry, or the like.

FIG. 3 is a cross-sectional side view schematic of a semiconductordevice assembly 100 incorporating integrated millimeter wave antennas700 on a front, or active side 202, of the semiconductor device 200 inaccordance with disclosed embodiments. As shown, in these embodiments, afirst redistribution layer 400 may be formed on the active side 202 ofthe semiconductor device 200 with traces, vias, or the like 606 to aninterconnect device, such as solder balls 608. A second redistributionlayer 500 may be formed on top of the first redistribution layer 400with a millimeter wave antenna 700 and one or more traces, vias, or thelike 602 to connect a millimeter wave antenna 700 to the semiconductordevice 200. As one of ordinary skill in the art having the benefit ofthis disclosure would understand, the positions of the firstredistribution layer 400 and the second redistribution layer 500 may beswitched as desired.

FIG. 4 is a cross-sectional side view schematic of a semiconductordevice assembly 100 incorporating integrated millimeter wave antennas700, 702 on POP configuration of a semiconductor device assembly 100 inaccordance with disclosed embodiments. As shown a first semiconductordevice 200 a may be interconnected with a second semiconductor device200 b in a POP configuration. Multiple redistribution layers 500 may beformed on one or the other of the semiconductor devices (as shown, 200b) to contain millimeter wave antenna structures 700, 702. As one ofordinary skill in the art having the benefit of this disclosure wouldunderstand, the number and positions of the redistribution layers 500,and number and positions of antenna structures 700, 702 may be varied asdesired.

FIG. 5 is a cross-sectional side view schematic of a semiconductordevice assembly 100 incorporating integrated millimeter wave antennas700, 702 on a fan-out, POP assembly in accordance with disclosedembodiments. As shown a first semiconductor device 200 a may beinterconnected with a second semiconductor device 200 b in a fan-out,POP configuration. Multiple redistribution layers 500 may be formed onone or the other of the semiconductor devices (as shown, 200 b) tocontain millimeter wave antenna structures 700, 702. As one of ordinaryskill in the art having the benefit of this disclosure would understand,the number and positions of the redistribution layers 500, and numberand positions of antenna structures 700, 702 may be varied as desired.

FIG. 6 is a cross-sectional side view schematic of a semiconductordevice assembly 100 incorporating integrated millimeter wave antennas700 and EMI shielding 900 in accordance with disclosed embodiments. Asshown, an EMI shielding layer 800 may be formed on a semiconductordevice 200 and include an EMI shield 900 that may be connected toground, or the like. A second redistribution layer 500 may be formed ontop of the EMI shielding layer 800 to contain millimeter wave antenna700. Among other things, the EMI shield 900 helps minimize interferenceof signals between the semiconductor device 200 and the antenna 700. Asone of ordinary skill in the art having the benefit of this disclosurewould understand, the number and positions of the layers 500, 800 andnumber and positions of antenna structures 700 and EMI shielding 900 maybe varied as desired.

FIG. 7 is a flow chart showing an exemplary method 1000 of manufacturinga semiconductor device assembly 100 incorporating integrated millimeterwave antennas 700 in accordance with disclosed embodiments. As shown,method 1000 may include at 1002 forming one or more dielectric layers(e.g., 500) on a semiconductor device 200. At 1004 one or more antennastructures (e.g., 700) may be formed in the one or more dielectriclayers. At 1006 one or more traces, vias, or the like (e.g., 602) may beformed through the one or more dielectric layers. At 1008 the one ormore antenna structures (e.g., 700) may be connected to thesemiconductor device 200 through the one or more traces, vias, or thelike. As one of ordinary skill in the art having the benefit of thisdisclosure would understand, the steps of method 1000 may be executed ina different order, at different times, or steps added or removed inaccordance with the various types of semiconductor device assemblies 100as disclosed herein.

Although various embodiments have been shown and described, the presentdisclosure is not so limited and will be understood to include all suchmodifications and variations are would be apparent to one skilled in theart.

What is claimed is:
 1. A semiconductor device assembly comprising: asemiconductor device having a first side and a second side opposite ofthe first side; a mold compound region adjacent to the semiconductordevice; a redistribution layer adjacent to the first side of thesemiconductor device; a dielectric layer adjacent to the second side ofthe semiconductor device; one or more vias extending through the moldcompound region and connected to at least one trace in the dielectriclayer; an antenna structure formed on the dielectric layer, the antennastructure comprising at least two portions, and each of the at least twoportions are connected to a selectable connection means that isconnected to the semiconductor device through the one or more vias andthe size of the antenna structure changes depending upon the number ofthe at least two portions selected to be connected to the semiconductordevice.
 2. The semiconductor device assembly of claim 1 wherein theantenna structure is a 5 g millimeter wave antenna.
 3. The semiconductordevice assembly of claim 1 wherein the selectable connection meanscomprises a fuse, a switch, or a severable connection.
 4. Thesemiconductor device assembly of claim 1 wherein the first side of thesemiconductor device is a live surface of the semiconductor device. 5.The semiconductor device assembly of claim 1 further comprising: one ormore second vias extending through the mold compound region andconnected to at least one trace in the dielectric layer; and a secondantenna structure formed on the dielectric layer and connected to thesemiconductor device through the one or more second vias.
 6. Asemiconductor device assembly comprising: a semiconductor device havinga first side; a mold compound region; a first redistribution layeradjacent to the first side of the semiconductor device, the firstredistribution layer configured to connect the semiconductor device toan external device; a second redistribution layer adjacent to the firstredistribution layer; and a plurality of antenna structures formed inthe second redistribution layer, the semiconductor device connected toeach of the plurality of antenna structures through the firstredistribution layer and through a selectable connection means whereineach of the plurality of antenna structures is configured to beselectably disconnected from the semiconductor device to change the sizeof the plurality of antenna structures.
 7. The semiconductor deviceassembly of claim 6 wherein at least one of the plurality of antennastructures is a 5 g millimeter wave antenna.
 8. The semiconductor deviceassembly of claim 6 wherein selectable connection means comprises afuse, a switch, or a severable connection.
 9. The semiconductor deviceassembly of claim 6 wherein the first side of the semiconductor deviceis a live surface of the semiconductor device.
 10. A semiconductordevice assembly comprising: a package-on-package assembly comprising: afirst semiconductor device; at least one via; and a second semiconductordevice connected to the first semiconductor device through the at leastone via; and a plurality of antenna structures selectively connectableto at least one of the first semiconductor device or the secondsemiconductor device through the at least one via, wherein each of theplurality of antenna structures is configured to be selectivelydisconnected from the semiconductor device to change the size of theplurality of antenna structures.
 11. The semiconductor device assemblyof claim 10 wherein the plurality of antenna structures are locatedbetween the first semiconductor device and the second semiconductordevice.
 12. The semiconductor device assembly of claim 11 furthercomprising: an additional antenna structure located on a back side ofthe package-on-package assembly.
 13. The semiconductor device assemblyof claim 10 wherein the plurality of antenna structures are located on aback side of the package-on-package assembly.
 14. The semiconductordevice assembly of claim 10 wherein at least one of the plurality ofantenna structures is a 5 g millimeter wave antenna.
 15. Thesemiconductor device assembly of claim 10 wherein at least one of theplurality of antenna structures is a tunable antenna.
 16. Asemiconductor device assembly comprising: a semiconductor device havingan active side and a back side; a mold compound region; a firstredistribution layer adjacent to the back side of the semiconductordevice; an electromagnetic interference (EMI) shield located in thefirst redistribution layer; a second redistribution layer located abovethe first redistribution layer; and an antenna structure formed in thesecond redistribution layer the antenna structure comprising at leasttwo portions and each of the at least two portions are connected to aselectable connection means that is connected to the semiconductordevice through a via and the size of the antenna structure changesdepending upon the number of the at least two portions selected to beconnected to the semiconductor device.
 17. The semiconductor deviceassembly of claim 16 wherein the antenna structure is a 5 g millimeterwave antenna.
 18. The semiconductor device assembly of claim 16 whereinthe selectable connection means comprises a fuse, a switch, or aseverable connection.